High thermal conductance AlN power module with hybrid integrated gate drivers and SiC trench MOSFETs for 2 kW single-phase PV inverter

摘要

Silicon carbide (SiC) trench MOSFET half-bridge and full-bridge power modules with hybrid integrated gate drivers on aluminium nitride (AlN) substrate were designed with electro-thermal co-simulation and soldered on an aluminium heatsink, achieving 0.3 K/W junction-to-heatsink thermal resistance. A 2 kW single-stage PV-inverter with active energy-buffer was built around the modules, achieving a weighted CEC efficiency of 95.4% and power density of 3.14 kW/l at a switching frequency of 100 kHz. The gate driver and bootstrap circuit are hybrid integrated on the power module for low parasitic gate-loop inductance. Electro-thermal co-simulation reveals a low transient temperature ripple of 6 K during the 60 Hz grid-frequency cycles at full load.