Punch-through reading mechanism and body raised up structure for a novel Punch-Through DRAM

摘要

It is the first time, we propose a new reading mechanism for an ARAM-like 1T-DRAM by exploiting Punch-Through (PT) phenomenon. We simulated and investigated the results of a modified ARAM structure with respect to different channel length, channel thickness. We found that the structure has an acceptable programming window (33 μA/um) at shorter gate lengths. The retention time can be improved by using a raised P-body which is beneficial in achieving a retention time of 341 ms.