A threshold voltage model for GaN-based heterostructure-free normally-off FinFET

摘要

An analytical model for threshold voltage of the normally-off GaN-based fin-shaped field-effect transistor (FinFET) is obtained. Analytical expressions for the threshold voltage and its roll-off effect are presented. Some design insights can be obtained from the results. The explicit expression for threshold voltage makes the model suitable to be embedded in circuit simulation and design tools.