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Fabrication of thin layer membrane using CMOS process for very low pressure sensor applications

机译:使用CMOS工艺制造薄层膜,用于非常低压传感器应用

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A very low pressure sensor has been proposed to be used in the eye for glaucoma treatment with pressure ranging from 10 mmHg to 75 mmHg. This paper presents process development of thin layer membrane for very low pressure sensor application. The structure of the membrane consists of parallel plate which both top and bottom electrodes were fixed at both sides. Utilizing CMOS compatible process, fabrication of the thin layer membrane involved in three stages; i) hole opening etch, ii) sacrificial intermediate oxide release etch and iii) closing of etch holes. Our work focuses on the characterization of holes opening etch size for the intermediate oxide release. Another study was carried out to understand the behavior of sealing off the hole openings etch. This study involved different deposition technique such as LPCVD, PECVD and combination both of them. The findings from these experiments are presented in this paper.
机译:已经提出了一种非常低的压力传感器,用于眼睛以进行青光眼处理,压力范围为10mmHg至75mmHg。本文介绍了薄层膜的过程开发,用于非常低压传感器应用。膜的结构由平行板组成,顶部和底部电极都固定在两侧。利用CMOS兼容工艺,制备三个阶段的薄层膜; i)孔开口蚀刻,II)牺牲中间氧化物释放蚀刻和III)闭合蚀刻孔。我们的工作侧重于孔开口蚀刻尺寸的表征,用于中间氧化物释放。进行了另一个研究以了解密封孔开口蚀刻的行为。该研究涉及不同的沉积技术,例如LPCVD,PECVD和它们两者组合。本文提出了这些实验的发现。

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