Performance of the forward-biased RF-LNA with deep n-well NMOS transistor

摘要

This paper presents the merits and demerits of incorporating deep n-well (DNW) implantation NMOS structures in a forward-biased RF-Low Noise Amplifier (LNA). Two versions of a fully-integrated 2.45 GHz LNA design with forward-biasing are presented, a standard transistor version and a DNW transistor version, to evaluate potential improvements or possible degradation in performance by using a DNW structure. The RF performance characteristics of the standard LNA version are compared to the performance of the DNW LNA version. Simulation results had shown that the performance of the power gain and noise figure has been significantly boosted through the use of the DNW transistor structure as amplifying devices.