Substrate effect on electrical properties of vanadium oxide thin film for Memristive device applications

摘要

This paper concerns, the comparative study of the effect of silicon and gold substrates on the electrical properties of vanadium dioxide thin films (VO2) for memristor applications. The VO2 thin films were deposited by (PLD) method, directly on a silicon for the first sample (VO2/Si) and on a 200 nm thin gold buffer layer for the second (VO2/Au.). The VO2 thin layers were characterized using current-voltage technique for different temperature. The results show a strong transition contrast which is important in the VO2/Si sample more than VO2/Au. In addition, our results indicate that the hysteresis width is larger in VO2/Au sample compared to VO2/Si sample.