Waveguide Effect of Fe Doped GaN Alloy Grown by MOCVD

摘要

The surface morphology and structural properties of Fe doped GaN alloy samples were analyzed by SPM9700 atomic force microscope and X LabXRD-6100 ray diffraction. The equivalent diameter of crystallite size was calculated to be 18nm according to the XRD data. The photoluminescence spectra of the samples were measured by 325nm continuous laser excitation at room temperature. The peaks position of the photoluminescence spectra of the samples was located at 450nm, 585nm and 665nm respectively. The waveguide effect was observed and analyzed. The peak wavelength of the waveguide is mainly in the 543nm. The results suggested significantly for further improvement of the performance of GaN based electronic devices and optoelectronic devices.