Comparison of the Surge Current Ruggedness between the Body Diode of SiC MOSFETs and Si Diodes for IGBT

摘要

The aim of this paper is to derive a statement, whether body diodes of future SiC MOSFETs will achieve similar I~2t values as freewheeling diodes currently used in IGBT modules. In the first part, a short experimental study will be shown, where two 1200 V SiC MOSFETs of different manufacturers are surge current tested under different conditions, like different surge current durations, temperatures, V_(gs) voltages and multiple stresses. The second part deals with the scaling of the measurements to the surge current capability of typical IGBT modules for traction converters.