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INFLUENCE-OF NONLOCALITY ON AMPLIFICATION OF SPACE CHARGEWAVES IN N-GAN FILMS

机译:N-GaN薄膜空间充电扩增的非植物影响

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Amplification of space charge waves (SCW) due to the negative differential conductivity (NDC) in n-GaN films of submicron thicknesses is investigated theoretically. An influence of nonlocal dependence of average electron velocity on the electron energy is considered. The simplest nonlocal moderis used where the total electron concentration is taken into account. The relaxation momentum and energy frequencies have been calculated. An influence of nonlocality on NDC results in the decrease of absolute value of its real part and appearance of the imaginary part. The simulations of spatial increments of amplification of SCW demonstrate that nonlocality inessential at frequencies f ≥ 100 GHz, and amplification is possible up till the frequencies f≤400...500GHz.
机译:理论上,研究了由于亚微米厚度的N-GaN膜中的负差分导电(NDC)引起的空间电荷波(SCW)的放大。考虑了平均电子速度对电子能量的非识别依赖性的影响。考虑到总电子浓度的最简单的非局部体育会。已经计算了放松动量和能量频率。非局部对NDC的影响导致其实体部分的绝对值和虚部的外观减少。 SCW扩增的空间增量模拟表明,在频率f≥100GHz时的非偏标,并且可以提高扩增,直到频率f≤400... 500GHz。

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