An Ultra Low-Power Non-Volatile Memory Design Enabled by Subquantum Conductive-Bridge RAM

摘要

Conductive-bridge RAM (CBRAM) memory cells offer speed, voltage, and energy advantages over floating gate flash cells. Here, we describe a memory design which carries these cell-level advantages up to the product level, achieving 100x lower read and write power and 10x lower standby power than typical flash-based designs.