Chapter 44 Thermal Resistance Characterization of SiGe-Based HBTs on Thick-Film and Thin-Film SOI

摘要

The nonlinear behavior of thermal resistance (R_(Th)) of SiGe HBTs on both thick-film and thin-film SOI substrates were investigated at different levels of dissipated power densities by the ISE-TCAD simulator in this chapter. We examined both of the buried oxide thickness and the silicon thickness effects on the device characteristics for thermal resistance. DESSIS-ISE was used to compute the temperature distribution from the given power. Simulation results suggest that the amount of self-heating is strongly dependent on device structure. Owing to the thick-film SiGe on SOI works like a bulk SiGe HBT, the enhanced silicon thickness could degrade the thermal resistance. Thus it needs to be carefully considered in device design. The thermal resistance characteristics revealed for SiGe HBTs on thick-film and thin-film SOI may help us to establish more accurate thermal models for reliability of circuit design and device technology optimization.