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Photocurrent spectroscopy of single GaAs/AlGaAs core-multishell nanowire devices

机译:GaAs / AlGaAs核-多壳纳米线器件的光电流光谱

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We investigate the optical and transport properties of single GaAs/AlGaAs core-multishell Quantum Well Tube (QWT) nanowire heterostructure. The QWT is defined by a thin (8 nm) GaAs layer embedded inside a thick AlGaAs shell which surrounds a 50 nm diameter GaAs NW core see Fig.1. The electrons and holes in the thin GaAs shell are radially confined and are free along the nanowire length. The radial confinement results in confined quantum states as shown in the schematics in Fig.1. These nanowires growth was achieved by two temperature MOCVD growth techniques [1, 2]. Optical studies of these nanowires show high quantum efficiency of the QWT ground state photoluminescence compared to the core luminescence. The shift to higher energies above the core corresponds to increasing quantum confinement of the ground state transition of the quantum well tube [1]. The energy eigenvalues depicted in Fig.1 are numerically calculated values of the energies of the electrons and holes confined to the quantum well tube where the hexagonal symmetry of the nanowires is approximated by cylindrical symmetry.
机译:我们研究了单个GaAs / AlGaAs核-多壳量子阱管(QWT)纳米线异质结构的光学和传输性质。 QWT由嵌入在厚AlGaAs壳内的薄(8 nm)GaAs层定义,该壳围绕着直径为50 nm的GaAs NW核,见图1。 GaAs薄壳中的电子和空穴被径向限制,并且沿着纳米线的长度方向是自由的。如图1的示意图所示,径向限制会导致量子状态受限。这些纳米线的生长是通过两种温度MOCVD生长技术实现的[1,2]。这些纳米线的光学研究表明,与核心发光相比,QWT基态光致发光的量子效率高。向核心上方的更高能量转移对应于量子阱管[1]的基态跃迁的量子限制增加。图1所示的能量本征值是限制在量子阱管中的电子和空穴的能量的数值计算值,其中纳米线的六边形对称性通过圆柱对称性近似。

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