P-type doping of MoS2 with phosphorus using a plasma immersion ion implantation (PIII) process

摘要

A controllable and area selective doping process, especially for p-type Molybdenum disulphide (MoS), is essential for the realization of various p junction-based devices. In this work, we demonstrate p-type doping of multilayer MoS with phosphorus (P) as a dopant using a CMOS-compatible plasma immersion ion implantation (PIII) technique. Detailed physical characterization including XPS and SIMS, backed with ab-initio DFT calculations, confirms p-type doping in P-implanted MoS that could be due to a combination of surface charge transfer from physisorbed phosphine ions and/or substitutional phosphorus present in the top few (∼5) layers. Controlled reduction in current levels and positive V shifts were observed in channel-doped MoS transistors. Further, selectively doped gated p-junction diodes (rectification ∼50X) have been demonstrated.