DC and noise characteristics of underlap Ultra-Thin BOX SOI nMOSFETs

机译：叠底超薄BOX SOI nMOSFET的直流和噪声特性

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The evolution of the 1/f noise and the resistance of extensionless Ultra-Thin BOX SOI nMOSFETs with decreasing gate length in comparison with standard ones is analyzed. It is revealed that the non-overlapped under-spacer regions define the resistance and 1/f noise behavior of extensionless devices.

机译：分析了与标准栅极相比，栅极长度减小的无扩展超薄BOX SOI nMOSFET的1 / f噪声和电阻的演变。揭示了不重叠的下间隔物区域定义了无扩展器件的电阻和1 / f噪声行为。

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《Institute of Electrical and Electronics Engineers International Conference on Electronics and Nanotechnology》|2015年|119-123|共5页
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Kudina V.; Garbar N.; Simoen E.; Claeys C.;
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1/f noise; Ultra-thin BOX MOSFET; extension architecture;

机译：1 / f噪声;超薄BOX MOSFET;扩展架构;

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2. An asymmetric channel SOI nMOSFET for improving DC and microwave characteristics [J] . Morin Dehan, Jean-Pierre Raskin Solid-State Electronics . 2002,第7期

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3. Impact of processing and back-gate biasing conditions on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETs [J] . V. Kudina, N. Garbar, E. Simoen, Solid-State Electronics . 2015,第mara期

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4. DC and noise characteristics of underlap Ultra-Thin BOX SOI nMOSFETs [C] . Kudina V., Garbar N., Simoen E., Institute of Electrical and Electronics Engineers International Conference on Electronics and Nanotechnology . 2015

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DC and noise characteristics of underlap Ultra-Thin BOX SOI nMOSFETs

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