Influence of thermal and flow distribution for the Czochralski growth process of Si under external magnetic field

摘要

This paper presents the mathematical models of the melt flow and the thermal transfer during the Czochralski crystal growth with an external magnetic field. The thermal and the flow distribution of silicon crystal growth under vertical magnetic field, transverse magnetic field and Cusp magnetic field were studied respectively using two-dimensional axisymmetric model and three-dimensional local model. The numerical simulation experiment was done using TD — 120 type single crystal furnace parameters. The results showed that the improvements of the thermal and the flow distribution of the silicon melt are limited because of the direction of vertical magnetic field and transverse magnetic field is uniform. The Cusp magnetic field can improve the thermal and the flow distribution effectively, boost the thermal stability of the melt zone, suppress impurity content, and improve the crystal quality.