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Classification of mem-devices

机译:内存设备的分类

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摘要

Several physical and mathematical models have been proposed to describe all 2-terminal non-volatile memory devices based on resistance switching (i.e. memristors), regardless of the device material and physical operating mechanisms. A complete and precise classification of memristor, including memcapacitor and meminductors as well, is instrumental in matching model parameters to physical phenomena and in boosting applications of memristors in unconventional computing systems. The aim of the paper is to provide a theoretical approach to the various classes of mem-devices (i.e. memristors, memcapacitors and meminductors) as nonlinear dynamical systems whose characteristic curves (i.e. dynamic characteristics) are pinched at the origin when driven by bipolar excitations. This theory provides a practical tool to describe mem-devices developed for non-volatile memory applications and neuromorphic systems.
机译:已经提出了几种物理和数学模型来描述基于电阻切换(即忆阻器)的所有2端非易失性存储器件,而与器件的材料和物理操作机制无关。忆阻器的完整而精确的分类,包括忆阻器和忆阻器,都有助于使模型参数与物理现象匹配,并促进忆阻器在非常规计算系统中的应用。本文的目的是为作为非线性动力系统的各种类型的mem设备(即忆阻器,memcapacitors和meminductors)提供一种理论方法,其非线性特性曲线(即动态特性)在受到双极激励驱动时会被夹在原点。该理论为描述为非易失性存储器应用和神经形态系统开发的记忆设备提供了一种实用的工具。

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