Study on maximum electric field modeling used for HCI induced degradation characteristic of LDMOS transistors

摘要

This paper reports a maximum electric field model of laterally diffused MOSFET (LDMOS) transistors under the condition of high current injection effect used for reliability simulations. LDMOSs operate under high-voltage and large-current biases, where electric field increases with biases at the gate edge. We present the investigation, formulations, and verifications of our maximum electric field model.