Properties of enhanced hydrostatic pressure-annealed silicon oxynitride films

摘要

The silicon oxynitride films were deposited by the plasma enhanced chemical vapor deposition (PECVD) technique at low temperature using ammonia, nitrous oxide and silane as precursor gases. The films were subjected to pre-annealing in oxygen at 1100–1200 °C for 5 hr. The samples were then annealed/treated at 1100 °C under enhanced hydrostatic pressure (HP) up to 1.17 GPa in argon. Effect of enhanced hydrostatic-pressure treatment on the Raman and photoluminescence (PL) of silicon oxynitride films was investigated. We found that the PL intensity of silicon rich oxynitride films can be significantly enhanced by HP annealing at high temperature (HT). The PL intensities are strongly governed by the preparation conditions of as-prepared layer as well as the annealing conditions.