METHOD FOR FORMING SILICON OXYNITRIDE FILM AND SUBSTRATE HAVING SILICON OXYNITRIDE FILM PRODUCED USING THIS FORMATION METHOD

摘要

The present invention provides a method of manufacturing a silicon oxynitride film capable of suppressing energy cost and a substrate having a silicon oxynitride film produced by the method. The above-mentioned method comprises a step of applying a film-forming composition containing a polysilazane compound to the surface of a substrate to form a coating film, a step of removing excess solvent contained in the coating film, and a step of removing the solvent from the coating film And a step of irradiating ultraviolet rays under the temperature condition of RTI ID = 0.0