Consistent simulation of dynamic carrier trap/detrap effects on circuit performance

摘要

This paper summarizes investigations for the carrier-trapping influence on electric characteristics of MOSFETs. Particular focus is given on the transient characteristics, which is affected by the time constant of the carrier trapping during the device operation. For the purpose a compact model has been developed for circuit simulation by considering the dynamic trap/detrap feature in the framework of the complete surface-potential description in HiSIM. It is demonstrated that the trap-density model considers the trap/detrap time constant enables to simulate not only frequency dependent switching characteristics accurately but also long-term device degradation.