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Technology Scaling Challenge and Future Prospects of DRAM and NAND Flash Memory

机译:DRAM和NAND闪存的技术扩展挑战和未来前景

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摘要

Memory manufactures are facing the challenges of technology scaling beyond 1xnm node DRAM and NAND flash memory. Even though we are managing to overcome patterning issue, we are still fighting against cost reduction and electrical limitation. In this paper, the scaling limitations and challenges of both DRAM and NAND are reviewed, and the future prospects with promising solutions are also addressed for high density DRAM and 3D NAND flash memory.
机译:存储器制造商正面临技术扩展至1xnm节点DRAM和NAND闪存之外的挑战。即使我们设法克服图案问题,我们仍在努力降低成本和减少电气限制。在本文中,回顾了DRAM和NAND的扩展限制和挑战,并针对高密度DRAM和3D NAND闪存解决了具有前景的解决方案的未来前景。

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