The Stability of Noise Behavior in Amorphous Indium Gallium Zinc Oxide Thin Film Transistors under Illumination

摘要

In this paper, the effects of light illumination on the noise are rarely discussed. In order to find out the noise behavior of a-IGZO TFTs under light and its change owing to the induced instability, we investigate the noise spectrum density of the a-IGZO TFTs under illumination conditions.