Trigonometric Window Functions for Memristive Device Modeling

摘要

After the fourth passive circuit element (Memristor) came to existence in 2008 its tremendous potential to be used as a replacement for MOSFETS made its mathematical modeling very imperative. Various device models for the memristor had been proposed earlier such as the linear ion drift model, non linear ion drift model, tunnel barrier model, and a recently proposed TEAM model. In case of linear ion drift model a window function is needed to restrict the state variable within device bounds. In this paper we propose a modified window function which accounts for greater non linearity than the existing windows such as the Jogelkar, Biolek or Prodromakis windows.