Al/CuxO/Cu Memristive Devices: Fabrication, Characterization, and Modeling.

摘要

Memristive devices have become very popular in recent years due to their potential to dramatically alter logic processing in CMOS circuitry. Memristive devices function as electrical potentiometers, allowing for such diverse applications as memory storage, multi-state logic, and reconfigurable logic gates. This research covered the fabrication, characterization, and modeling of Al/CuxO/Cu memristive devices created by depositing Al top electrodes atop a CuxO film grown using plasma oxidation to grow the oxide on a Cu wafer. Power settings of the plasma oxidation system were shown to control the grown oxide thickness and oxygen concentration, which subsequently affected memristive device behaviors. These memristive devices demonstrated complete nonpolar behavior and could be switched either in a vertical (Al/CuxO/Cu) or lateral (Al/CuxO/Cu/CuxO/Al) manner. The switching mechanism of these devices was shown to be filamentary in nature. Physical and empirical models of these devices were created for MATLAB, HSPICE, & Verilog A environments. While the physical model proved of limited practical consequence, the robust empirical model allows for rapid prototyping of CMOS-memristor circuitry.