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Modeling of switching noise and coupling in multiple chips of 3D TSV-based systems

机译:基于3D TSV的系统的多个芯片中的开关噪声和耦合建模

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This paper reports on modeling of simultaneous switching noise (SSN) in power distribution network (PDN) for 3D systems, where multiple IC chips are stacked and connected by through-silicon vias (TSVs). The noises generated by current switching during the transition from idle state to active state are analyzed with both on-chip and off-chip PDNs. SSN is decomposed into different frequency components and their characteristics are discussed. The switching noises in active and silent chips are extracted to evaluate the noise interference in a 3D chip stack. Decoupling capacitors and stagger intervals are used to suppress the noise. Modeling the PDN to minimize the switching noise effects based on our hybrid approach is demonstrated to be effective to analyze the 3D PDN and understand the design tradeoffs in 3D architectures.
机译:本文报道了3D系统配电网络(PDN)中同时开关噪声(SSN)的建模,其中多个IC芯片堆叠并通过硅通孔(TSV)连接。使用片上和片外PDN可以分析从空闲状态到活动状态的转换过程中电流切换产生的噪声。 SSN被分解为不同的频率成分,并讨论了它们的特性。提取有源和无声芯片中的开关噪声,以评估3D芯片堆栈中的噪声干扰。去耦电容器和交错间隔用于抑制噪声。我们证明了基于我们的混合方法对PDN建模以最大程度地降低开关噪声影响,可以有效地分析3D PDN并了解3D架构中的设计折衷。

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