High Quality And Transferrable Graphene Grown on The Treated Copper Films via Ambient-pressure Chemical Vapor Deposition (CVD)

摘要

Chemical Vapor Deposition (CVD) is a method used to produce the high qualities of few layer graphene (FLG) in the short time. Traditionally, CVD is operated under vacuum conditions. Here we present a systematic simple method to grow and transfer high-quality graphene films on the treated copper foils under an atmospheric pressure, by better controlling the particle pressure of CH_4. The characteristics of the FLG are documented by TGA, X-ray diffraction, Raman spectroscopy and AFM. Results show that the high quality, large area FLG can be grown on the treated Cu thin films and can be transferable to another substrate using manipulate the particle pressure techniques. Meanwhile, the transparency and conductivity characteristics of the films can be exploited for energy and sensing applications.