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MWIR superlattice detectors integrated with substrate side illuminated plasmonic coupler

机译:MWIR超晶格探测器与基板侧面照明等离子耦合器集成在一起

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Detectivity of mid-wave infrared (MWIR) detectors based on InAs/GaSb type Ⅱ strained layer superlattices (T2SLs) can be significantly enhanced at select wavelengths by integrating the detector with a back-side illuminated plasmonic coupler. The application of a simple metal-T2SL structure directly on the GaSb substrate can result in radiation losses into the substrate due to the low refractive index of T2SL layer. However, insertion of a higher refractive index material, such as germanium (Ge), into the metal-SLS structure can confine the surface plasmon waveguide (SPW) modes to the surface. In this work, metal (Au)-Ge-T2SL structures are designed with an approximately 100 nm thick Ge layer. The T2SL layer utilized a p-i-n detector design with 8 monolayers (MLs) InAs/8 MLs GaSb. A plasmonic coupler was then realized inside the 300 μm circular apertures of these single element detectors by the formation of a corrugated metal (Au) surface. The T2SL single element detector integrated with an optimized plasmonic coupler design increased the quantum efficiency (QE) by a factor of three at an operating temperature of 77 K and 3 to 5 μm illumination wavelength, compared to a reference detector structure, and each structure exhibited the same level of dark current.
机译:通过将InAs / GaSbⅡ型应变层超晶格(T2SLs)与后照式等离子体耦合器集成在一起,可以显着提高基于InAs / GaSbⅡ型应变层超晶格(T2SLs)的中波红外(MWIR)检测器的检测能力。由于T2SL层的折射率低,直接在GaSb衬底上应用简单的金属T2SL结构可能会导致辐射损耗进入衬底。但是,将较高折射率的材料(例如锗(Ge))插入金属SLS结构可以将表面等离子体激元波导(SPW)模式限制在表面上。在这项工作中,金属(Au)-Ge-T2SL结构被设计为具有约100 nm厚的Ge层。 T2SL层采用了p-i-n检测器设计,具有8个单层(ML)InAs / 8 ML GaSb。然后,通过形成波纹金属(Au)表面,在这些单元素探测器的300μm圆形孔内实现了等离子体耦合器。与参考探测器结构相比,集成了优化等离子体耦合器设计的T2SL单元素探测器在77 K的工作温度和3至5μm的照明波长下将量子效率(QE)提高了三倍。相同水平的暗电流。

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