Chip Package Interaction with fine pitch Cu pillar bump using mass reflow and thermal compression bonding assembly process for 20nm/16nm and beyond

摘要

This paper summarizes key learnings on 20/16nm CPI (Chip-Package-Interaction) challenges at 100um pitch and below to support ever increasing performance/cost/form factor demands for high performance mobile SoCs. CPI solutions for two types of Cu pillar interconnects using mass reflow and thermal compression type assembly process respectively are studied in technology development/production, and separate bump cell structures are proposed.