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Ultra-Low-Power Low Drop-Out (LDO) Voltage Regulator With Improved Power Supply Rejection

机译:超低功耗低掉 - 输出(LDO)电压调节器,具有改进的电源抑制

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Having a high-power supply rejection (PSR) over a wide range of frequencies is a very important specification for most of low-dropout voltage regulators (LDOs). A low-power LDO with 2 methods of high-frequency PSR and loop stability compensation techniques is presented in this paper. The proposed LDO achieves a high PSR over a wide frequency range with low power and small area consumption. The LDO is implemented in 65 nm CMOS technology and achieves a PSR better than 77 dB up to 30 MHz for output load currents up to 25 mA and a 4 μF output load capacitor. The design is suitable for capacitor loaded (Capped) LDOs with a wide output load current range up to 100 mA and output load capacitor range from 1 μF to 12 μF. The proposed LDO consumes a no-load quiescent current of 5 μA and an area of 400 μm × 200 μm.
机译:在各种频率上具有高电源抑制(PSR)是大多数低压差电压调节器(LDO)的非常重要的规范。 本文提出了一种具有2种高频PSR和环路稳定补偿技术的低功率LDO。 所提出的LDO在宽频率范围内实现高PSR,具有低功耗和小面积消耗。 LDO以65nm CMOS技术实现,实现优于77 dB的PSR,最高可达30 MHz,用于输出负载电流,高达25 mA和4μF输出负载电容。 该设计适用于加载的电容(盖)LDO,宽输出负载电流范围高达100 mA,输出负载电容范围为1μF至12μF。 所提出的LDO消耗了5μA的空载静态电流,面积为400μm×200μm。

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