OPTO-ELECTRICAL ANALYSIS OF NANOCONE STRUCTURED ULTRATHIN SILICON SOLAR CELLS

摘要

Light trapping via nanotexturing has emerged as a prominent method of achieving high light absorption in solar cells. We present an analytical model explaining the intrinsic limits on energy conversion efficiency in such nanotextured structures by using both optical and electrical techniques. Our model incorporates the fundamental loss mechanisms- Auger recombination and surface recombination- as well as the main structure design options- film thickness, doping and surface area. Validated against optical and electrical simulations, our model predicts that an optimized 3μm thick double-sided nanocone grating can yield a maximum solar conversion efficiency of 24.9% with a photocurrent of 36.6mA and an open-circuit voltage of 0.81 V.