Transient SPICE simulation of Ni/HfO2/Si-n+ resistive memories

摘要

A new SPICE model for the simulation of conductive bridge resistive memories has been developed. The model is based on filamentary transport and includes conduction through a constriction (by means of the quantum point contact model) and an accurate thermal description. It has been used for calculating thermally assisted reset transitions in Ni/HfO2/Si-n+ samples. Transient simulations have been carried out in order to obtain reset I-V and I-t curves, which are compared with experimental results showing a reasonably good fit. Finally, the role of the evolution at simulation time of the ohmic and thermal resistances is analyzed.