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PVT-aware digital controlled voltage regulator design for ultra-low-power (ULP) DVFS systems

机译:面向超低功耗(ULP)DVFS系统的可识别PVT的数控电压调节器设计

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On-chip regulators are becoming increasingly important for ultra-low voltage nano-scale SoC systems. In this paper, an all-digital controlled linear regulator is presented. A novel Process-Voltage-Temperature (PVT) -aware design is implemented to mitigate environmental variations and to guarantee the resolution of the liner regulator. The proposed digital voltage regulator can achieve up to 98.4% current efficiency. This design leads to three major advantages: (1) fast response time of 60ns, (2) low quiescent current 162µA in a stable state, and (3) PVT tolerance. The settling time is about 138ns. The output voltage error in 0.3V stable states with error improvement of the resolution using PVT-aware DED is around 50%. The best FOM at the regulated voltage (V) of 0.51V is 4.2 pA·s. This digital controlled voltage regulator is designed and implemented for near-/sub- threshold operations. It can generate V from 0.3V ∼ 0.51V in steps of 30mV without resolution degradation under PVT variations. The total area of the regulator is about 388.6×35.7µm using TSMC 65-nm low-power bulk CMOS technology.
机译:片上稳压器对于超低压纳米SoC系统变得越来越重要。本文提出了一种全数字控制的线性稳压器。实施了一种新颖的过程电压温度(PVT)感知设计,以减轻环境变化并确保线性调节器的分辨率。建议的数字稳压器可实现高达98.4%的电流效率。该设计具有三个主要优点:(1)60ns的快速响应时间;(2)稳定状态下的静态电流低至162µA;(3)PVT容限。建立时间约为138ns。使用支持PVT的DED可以提高分辨率在0.3V稳定状态下的输出电压误差,约为50%。调节电压(V)为0.51V时的最佳FOM为4.2 pA·s。该数字控制稳压器是为接近/低于阈值的操作而设计和实现的。它可以从0.3V到0.51V以30mV的步长产生V,而不会因PVT变化而导致分辨率降低。使用台积电65纳米低功耗块状CMOS技术,稳压器的总面积约为388.6×35.7μm。

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