Improved field emitter arrays with high-aspect-ratio current limiters and self-aligned gates

摘要

We report an updated device structure and fabrication process for the creation of silicon field emitter arrays with integrated silicon vertical current limiters for applications that require high performance cold cathode electron sources. The improved device includes thicker dielectric films to prevent dielectric breakdown and leakage current from the gate electrode to the substrate, and metalized probe pads to reduce electron interception by the gate electrode.