Temperature dependence of the field emission from monolayer graphene

摘要

Temperature dependence of the field emission from monolayer graphene was investigated in order to understand the field emission process from graphene. The results show that the field emission current under the same voltage increases dramatically with temperature rising from 300 K to 573 K. These results may be associated with a narrow energy gap of morphological disordered graphene, in which electrons can be excited from valence band to conduction band easily by increasing temperature.