Prediction of AC performance of double-polysilicon bipolar transistors from e-test parameters: An experiment

摘要

AC characterisation of silicon bipolar and BiCMOS processes for RF applications is necessary because of the ever-increasing operating speed of bipolar devices. The data acquisition parameter extraction steps associated with AC characterisation and modelling are time consuming and tedious and cannot easily be implemented as part of standard process monitor measurements. This paper discusses a methodology for relating the readily available e-test parameter database to the AC parameters which are more difficult to obtain. The work was done on a 0.6 /spl mu/m BiCMOS process which is suited to mixed mode RF chip designs.