Understanding the switching mechanism of charge-injection GeTe/Sb2Te3 phase change memory through electrical measurement and analysis of 1R test structure

摘要

We describe the switching mechanism of GeTe/Sb2Te3 phase change memory called “topological-switching Random Access Memory” (TRAM). DC sweep and AC transient analysis of the TRAM TEGs provided evidence of enhancement of atomic movement in TRAM by charge injection. A hysteresis loop of resistance that was characteristic to TRAM, fast threshold switching of 4 ns by electron injection, and MLC capabilities by hole generation were revealed for the first time.