In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10～20 nm for arsenic dosage(2 × 10{sup}14/cm{sup}2), excimer laser source(λ =248 nm) is KrF, and sheet resistances are measured to 1 kΩ/□ at junction depth of 15 nm.
展开▼
机译：在本文中，使用超高真空化学气相沉积（UHVCVD）和准分子激光退火（ELA）研究了新型器件结构以实现超快速和超小硅装置。基于这些深度亚微米装置的基本技术，可以制造高速和低功耗。这些基于无损伤工艺的结置工艺用于替换低能量离子植入的连接技术涉及固相扩散和气相扩散。结果，通过ELA的超浅结深度分析为10〜20nm，用于砷剂量（2×10 {sup} 14 / cm {sup} 2），准分子激光源（λ= 248nm）是krf和薄片电阻在15nm的结深度下测量为1kΩ/□。
展开▼
