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Failure Analysis of a PLL ESD Structure Design Defect

机译:PLL ESD结构设计缺陷的故障分析

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摘要

A failure analysis of a product due to the on chip ESD structure defects is presented in this paper. ESD is one of the most important reliability issues in the design of integrated circuits. About 40% of the failure of integrated circuits is related to ESD/EOS stress. In order to improve the reliability of ICs, the design of ESD protection is increasingly necessary for the modern semiconductor industry [1][2]. There are many standards to evaluate the ESD robustness of a circuit, and the HBM and MM model are the most popular criteria. To improve the ESD capability and find out the root of the failure phenomenon, this paper employs some FA tools to deal with the problems, and the optimized solution is given and discussed, which can effectively improve the reliability of the product.
机译:本文提出了由于芯片ESD结构缺陷引起的产品的故障分析。 ESD是集成电路设计中最重要的可靠性问题之一。大约40%的集成电路故障与ESD / EOS压力有关。为了提高IC的可靠性,现代半导体工业越来越需要ESD保护的设计[1] [2]。有许多标准来评估电路的ESD稳健性,HBM和MM模型是最受欢迎的标准。为了提高ESD能力并找出失败现象的根本,本文采用了一些对问题的FA工具来解决问题,并讨论了优化的解决方案,可以有效地提高产品的可靠性。

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