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Chip-to-rectangular waveguide transition realized in embedded Wafer Level Ball Grid Array (eWLB) package

机译:嵌入式晶片级球栅阵列(eWLB)封装中实现的芯片到矩形波导过渡

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In this paper, we present for the first time the realization of a 77 GHz chip-to-rectangular waveguide transition realized in an embedded Wafer Level Ball Grid Array (eWLB) package. The chip is contacted with a coplanar waveguide (CPW). For the transformation of the transverse electromagnetic (TEM) mode of the CPW line to the transverse electric (TE) mode of the rectangular waveguide an insert is used in the eWLB package. This insert is based on radio-frequency (RF) printed circuit board (PCB) technology. Micro vias formed in the insert are used to realize the sidewalls of the rectangular waveguide structure in the fan-out area of the eWLB package. The redistribution layers (RDLs) on the top and bottom surface of the package form the top and bottom wall, respectively. We present two possible variants of transforming the TEM mode to the TE mode. The first variant uses a via realized in the rectangular waveguide structure. The second variant uses only the RDLs of the eWLB package for mode conversion. We present simulation and measurement results of both variants. We obtain an insertion loss of 1.5 dB and return loss better than 10 dB. The presented results show that this approach is an attractive candidate for future low loss and highly integrated RF systems.
机译:在本文中,我们首次提出了在嵌入式晶圆级球栅阵列(eWLB)封装中实现的77 GHz芯片到矩形波导过渡的实现。芯片与共面波导(CPW)接触。为了将CPW线的横向电磁(TEM)模式转换为矩形波导的横向电(TE)模式,在eWLB封装中使用了插件。该插件基于射频(RF)印刷电路板(PCB)技术。插入物中形成的微通孔用于在eWLB封装的扇出区域中实现矩形波导结构的侧壁。包装顶部和底部表面上的重新分布层(RDL)分别形成顶壁和底壁。我们介绍了将TEM模式转换为TE模式的两种可能的变体。第一种变型使用在矩形波导结构中实现的通孔。第二种变体仅使用eWLB包的RDL进行模式转换。我们提供两种变体的仿真和测量结果。我们获得了1.5 dB的插入损耗和优于10 dB的回波损耗。呈现的结果表明,这种方法对于未来的低损耗和高度集成的RF系统是一种有吸引力的选择。

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