A low loss SOI lateral trench IGBT and superjunction device with insulated trench barrier

摘要

Recently, The lateral insulated gate bipolar transistor (LIGBT) is becoming one of the most promising devices in the field of power integrated circuit(PIC).However, the performance of Si power devices gradually approach the physical limit. In this article we propose a insulated trench barrier(TB) structure manufactured in the device drift region closed to emitter to further improve the property, especially the trade-off between conduction loss and switching loss, of devices at the field of silicon-on-insulator (SOI) Lateral Insulated Gate Bipolar Transistor (LIGBT) and silicon-on-insulator (SOI) superjunction (SJ) Lateral Insulated Gate Bipolar Transistor (LIGBT). The insulated trench barrier (TB) plays the role of electron injection enhancement, which could lower conduction loss while keep the other properties,like switching loss or breakdown voltage,from degenerating. What's more, the TB structure can be manufactured with trench gate at one step without raising the complexity or cost of process. By the advantages mentioned above, the TB structure is demonstrated a great potential in the future power electronic technology and application.