A novel deep-impurity-level assisted tunneling technology for enhanced interband tunneling probability

摘要

In this work, a novel deep-impurity-level assisted tunneling technology with enhanced band to band tunneling (BTBT) probability is proposed and experimentally demonstrated. Through implanting deep level impurities in the tunnel junction, continuous deep level states can be introduced to facilitate the BTBT process for significant BTBT probability boosting. Compared with conventional tunnel diodes, the fabricated deep-impurity-level assisted tunnel diodes exhibit 7.8× and 23× current enhancement in P++/N+ and N++/P+ tunnel diodes respectively, showing its great potential for future current enhancement in tunnel FETs.