Design of a 800V VDMOS termination structure

摘要

The termination structure of 800 V VDMOS has been designed, which consists of the floating field limit ring and the filed plate to reduce the peak of the electric field and make it flat at the silicon surface. By the simulation, the breakdown-voltage 880 V has been achieved with 230 μm length termination structure, and the termination's reliability has been improved owing to 2.4E+5 V*cm of the maximum surface electric field. The process technology of this device is simple without additional masks and steps.