机译:高压VDMOS晶体管的均匀浅沟槽终端设计
Guilin Univ Elect Technol Guangxi Key Lab Precis Nav Technol & Applicat Guilin 541004 Peoples R China;
Guilin Univ Elect Technol Guangxi Key Lab Precis Nav Technol & Applicat Guilin 541004 Peoples R China;
Guilin Univ Elect Technol Guangxi Key Lab Precis Nav Technol & Applicat Guilin 541004 Peoples R China;
Guilin Univ Elect Technol Guangxi Key Lab Precis Nav Technol & Applicat Guilin 541004 Peoples R China;
Guilin Univ Elect Technol Guangxi Key Lab Precis Nav Technol & Applicat Guilin 541004 Peoples R China;
electric fields; semiconductor device breakdown; MOSFET; uniform shallow trenches termination design; high-voltage VDMOS transistor; field plate; electric field peaks; average electric field strength; breakdown voltage characteristic; termination length; ST2 structure; depletion region; shallow trenches; parallel-plane junction; edge curvature effect; conventional CMOS process; mask; voltage 706; 0 V; size 132; 0 mum;
机译:4H-SiC VDMOS晶体管浅坑和装置设计对光致发光和差分干扰对比度映射的线缺陷分析的影响
机译:利用浅沟槽和场限制环的功率器件改进的结终端设计
机译:一种采用浅沟槽填充氧化物的新型结终止方法
机译:4H-SiC VDMOS晶体管浅坑和装置设计对光致发光和差分干扰对比度映射的线缺陷分析
机译:高压常关型平面4H碳化硅垂直结场效应晶体管的设计与制造。
机译:用于高频和医疗设备的垂直双扩散金属氧化物半导体(VDMOS)功率晶体管结构的优化
机译:使用深沟槽的超结功率器件的改进的结终端设计
机译:浅埋壕沟处置低放废物的设计改进