A novel body self-biased technique for enhanced RF performance of a SP8T antenna switch in partially depleted CMOS-SOI technology

摘要

A novel body self-biased technique to obtain lower insertion loss, higher isolation and better harmonic performance for SOI body contacted FETs switches is proposed. By using this new technique, a single-pole eight-throw antenna switch in IBM 0.18um partially depleted CMOS-SOI technology is presented for 0.1 to 3GHz multi-mode multi-band cellular applications. Floating body and body contacted (using the conventional bias technique) MOSFETs switches are both utilized for comparison. The contrast results point out that this body self-biased technique is an attractive solution to achieve low 2nd and 3rd harmonics without degrading the insertion loss. To the best of our knowledge, this work is the first one to describe this novel bias technique for enhanced RF performance of SOI switch.