Lock-in pixels readout circuit using a high speed lateral electric field modulator with differential charge accumulation for stimulated Raman scattering imager

摘要

In this paper, a lock-in pixel readout circuits using a high speed lateral electric field modulator with differential charge accumulation for a stimulated Raman scattering imager is presented. The stimulated Raman scattering works by detecting the vibrations in chemical bonds between atoms, and the generated Raman signal after stimulated scattering processes is very low compared to offset signal. By using a high-speed lateral electric field modulator with lock-in pixels differential charge accumulation technique using a sample-and hold circuit with a fully differential amplifier, very small effective Raman signal can be extracted from large offset signal and high dynamic range is achieved.