Impact of the basal material on the deposition titanium nitride thin films

摘要

Studied by dc reactive magnetron sputtering method, with Si - p and Si (111) - p (100), two different Si do base, affect the performance of TiNx thin film preparation. Results show that Si - of the preparation of p (111) as the basal TiN_x film performance is better than that of Si - p (100), the performance in the particles more renew, more Octavia and XRD diffraction fengfeng shape with TiNx diffraction peak do not overlap. Therefore, choose p - Si (111) basal deposited titanium nitride thin films, can meet the requirements of the preparation of optical thin film quality.