Nanopatterned p-i-n solar cells with the fast carrier transit time and low reflectivity

摘要

We investigated the reflectivity and carrier response time of the nano-patterned n-ZnO/a-Si(i)/p+-Si hetero-junction photodiodes. Comparing with the conventional planar structure n-ZnO/a-Si/p+-Si hetero-junction photodiodes, we found better electrical and optical performance for the nano-patterned photodiodes. The concept of the lower reflectivity and the shorter response time of our nano-patterned structure can be applied to have better efficiency than the conventional solar cells.