Analysis of Radio Frequency Performance on GaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor which Applicable for Green Energy System Applications

摘要

We have proposed a tunneling field-effect transistor (TFET) having a GaAs/InGaAs heterojunction structure for radio frequency (RF) application. The GaAs/InGaAs heterojunction TFETs are investigated in terms of DC and RF characteristics by using the device simulation technology. The proposed TFET showed excellent subthreshold swing (S) and on/off current ratio as low standby power (LSTP) devices. Moreover, the superb RF performances of proposed TFET were obtained by designing drain doping (DDrain). It was confirmed that the GaAs/InGaAs heterojunction TFET is suitable for RF applications.