A semi-analytical model for III-V semiconductor quantum well field effect transistors

摘要

Si MOS technology is reaching near the fundamental scaling limit. New materials are being explored to sustain the continual scaling of MOSFETs into the deca-nanometer regime or even lower. III-V semiconductor materials are potentially attractive as alternatives to Si. In this paper we propose a semi-analytical model for the current-voltage characteristics of III-V semiconductor quantum well field-effect transistors (QWFET). The model calculates the quantized states in the well through numerical solution of one dimensional Schrodinger's equation. Channel carrier density and drain current as functions of gate and drain voltages are calculated analytically. It is expected that the model will be useful in qualitative studies of the device trends.