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Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs

机译：单轴拉伸应累积 - 模式门 - 全部围绕Si纳米线NMOSFET

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摘要

In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ∼400 K and carrier mobility, flat-band and threshold voltages are extracted and investigated.

机译：在这项工作中，我们报告了基于具有单轴拉伸菌株的硅纳米线的积累 - 模式（AM）门（GaA）NMOSFET的实验研究。将其电气特性从室温进行，提取和研究了载流子迁移率，平面和阈值电压。

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《Annual Device Research Conference》|2011年||共2页
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Najmzadeh Mohammad; Bouvet Didier; Grabinski Wladek; Ionescu Adrian M.;
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中图分类 TP23-53;
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专利

1. Accumulation-mode gate-all-around si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain [J] . M. Najmzadeh, D. Bouvet, W. Grabinski, Solid-State Electronics . 2012,第期

机译：具有小于5 nm横截面和高单轴拉伸应变的累积模式全栅si纳米线nMOSFET
2. Evidence for the Fourfold-Valley Confinement Electron Piezo-Effective-Mass Coefficient in Inversion Layers of Uniaxial-Tensile-Strained (001) nMOSFETs [J] . Chen M.-J. Electron Device Letters, IEEE . 2012,第6期

机译：单轴拉伸（001）nMOSFET的反型层中四重谷限制电子压电有效质量系数的证据
3. Temperature dependence of low-frequency noise characteristics in uniaxial tensile strained nMOSFETs [J] . Huang Po Chin, Chang Ching Yao, Cheng Osbert, Japanese journal of applied physics . 2015,第10期

机译：单轴拉伸应变nMOSFET中低频噪声特性的温度依赖性
4. Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs [C] . Najmzadeh Mohammad, Bouvet Didier, Grabinski Wladek, 2011 69th Annual Device Research Conference . 2011

机译：单轴拉伸应变累积模式全栅Si纳米线nMOSFET
5. Short channel effects suppression and process variability in a dual-gate Gate-All-Around Si nanowire transistor [D] . Rony, Mohammed Wahiduzzaman. 2016

机译：短沟道效应抑制和处理双栅极 - 全面Si纳米线晶体管中的过程变异性
6. Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO2/SiON Gate Stack [O] . Yung-Yu Chen 2014

机译：氟化HfO2 / SiON栅堆叠的单轴应变nMOSFET的电学特性
7. Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs [O] . Mohammad Najmzadeh, Didier Bouvet, Wladek Grabinski, 2011

机译：单轴拉伸应累积 - 模式门 - 全部围绕Si纳米线NMOSFET

Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs

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